DocumentCode
1283280
Title
Frequency response and differential Gain in strained and unstrained InGaAs/InGaAsP quantum well lasers
Author
Perrin, S.D. ; Cooper, Diana Marina
Volume
27
Issue
14
fYear
1991
fDate
7/4/1991 12:00:00 AM
Firstpage
1278
Lastpage
1280
Abstract
A systematic investigation is presented into the frequency response and differential gain in both strained and unstrained InGaAs/InGaAsP 1.5 mu m quantum well lasers. Both the differential gain and damping in strained devices were found to be similar in magnitude to comparable unstrained devices. In addition, the differential gain was found to increase and the damping to decrease with increasing numbers of quantum wells.
Keywords
III-V semiconductors; frequency response; gallium arsenide; gallium compounds; indium compounds; laser transitions; semiconductor junction lasers; 1.5 micron; MQW; damping; differential Gain; frequency response; quantum well lasers; semiconductor lasers; strained devices; unstrained devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910801
Filename
81187
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