Title :
Experimental gain and saturation performance of GaAs/AlGaAs SCH quantum well travelling wave optical amplifier
Author :
Tombling, C. ; Saitoh, T. ; Suzuki, Y. ; Tanaka, H.
Author_Institution :
NTT Basic Res. Lab., Tokyo, Japan
fDate :
7/18/1991 12:00:00 AM
Abstract :
Successful combination of high gain and high saturation output power performance in a GaAs/AlGaAs quantum well travelling wave amplifier is reported. Comparable performance to similar 1.5 mu m InGaAs/InP devices is achieved, surpassing expectations. A device with a three quantum well active region and separately confined heterostructure design has both a small signal gain of 22.9 dB and a saturation output power of 40 mW at the low drive current of 40 mA.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; semiconductor quantum wells; 22.9 dB; 40 mA; 40 mW; GaAs-AlGaAs; SCH quantum well; gain performance; low drive current; saturation output power; saturation performance; semiconductor lasers; separately confined heterostructure; small signal gain; travelling wave optical amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910864
