Title :
50-GHz self-aligned silicon bipolar transistors with ion-implanted base profiles
Author :
Warnock, James ; Cressler, John D. ; Jenkins, Keith A. ; Chen, Tze-Chiang ; Sun, Jack Y C ; Tang, Denny D.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Silicon bipolar transistors having cutoff frequencies from 40 to 50 GHz have been fabricated in a double -polysilicon self-aligned structure using a process which relies on ion implantation for the intrinsic base formation. The devices have nearly ideal DC characteristics, with breakdown voltages adequate for most digital applications. The results demonstrate that the performance limits of conventional implanted technologies are significantly higher than previously thought.<>
Keywords :
elemental semiconductors; heterojunction bipolar transistors; ion implantation; semiconductor technology; silicon; solid-state microwave devices; 40 to 50 GHz; DC characteristics; Si:B; Si:B-Si:As; bipolar transistors; breakdown voltages; cut off frequency; cutoff frequencies; digital applications; double -polysilicon self-aligned structure; intrinsic base formation; ion implantation; ion-implanted base profiles; Acceleration; Bipolar transistors; Boron; Cutoff frequency; Diffusion processes; Doping; Implants; Ion implantation; Silicon; Thermal resistance;
Journal_Title :
Electron Device Letters, IEEE
