Modelling of thin-film HTS/ferroelectric interdigital capacitors

Author

Gevorgian, S. ; Carlsson, E. ; Rudner, S. ; Wernlund, L.-D. ; Wang, X. ; Helmersson, U.

Author_Institution

Dept. of Microwave Technol., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

143

Issue

5

fYear

1996

fDate

10/1/1996 12:00:00 AM

Firstpage

397

Lastpage

401

Abstract

The model of the interdigital capacitor (IDC) has been used for monitoring and analysing the dielectric properties of thin ferroelectric films. The dielectric properties of the film are correlated to its crystalline structure using a simple model of STO. The results of the analysis may be used for optimisation of growth and annealing processes of the films and reducing the effects of the electrode ferroelectric interface. The model can be used to optimise the design of IDCs in the sense of minimum losses and maximum controllability by selecting finger width and gapwidth of the IDC. Further improvement of the model suggests a comprehensive study of all possible mechanisms affecting the dielectric constant and the losses of STO films

Keywords

ferroelectric capacitors; ferroelectric materials; ferroelectric thin films; high-temperature superconductors; permittivity; strontium compounds; superconducting microwave devices; thin film capacitors; IDC; STO films; SrTiO₃; annealing; crystalline structure; design; dielectric constant; dielectric properties; electrode ferroelectric interface; finger width; gapwidth; growth; losses; thin ferroelectric films; thin-film HTS/ferroelectric interdigital capacitors;

fLanguage

English

Journal_Title

Microwaves, Antennas and Propagation, IEE Proceedings

Publisher

iet

ISSN

1350-2417

Type

jour

DOI

10.1049/ip-map:19960595

Filename

553648