CMOS Compatible Silicon-on-Insulator Polarization Rotator Based on Symmetry Breaking of the Waveguide Cross Section

Author

Aamer, Mariam ; Gutierrez, Ana M. ; Brimont, Antoine ; Vermeulen, Diedrik ; Roelkens, Gunther ; Fedeli, Jean-Marc ; Håkansson, Andreas ; Sanchis, Pablo

Author_Institution

Nanophotonics Technol. Center, Univ. Politec. Valencia, València, Spain

Volume

24

Issue

22

fYear

2012

Firstpage

2031

Lastpage

2034

Abstract

A polarization rotator in silicon-on-insulator technology based on breaking the symmetry of the waveguide cross section is reported. The 25- μm-long device is designed to be integrated with standard grating couplers without the need for extra fabrication steps. Hence, fabrication is carried out by a 2-etch-step complementary metal-oxide-semiconductor compatible process using 193-nm deep ultraviolet lithography. A polarization conversion efficiency of more than -0.85 & dB with insertion losses ranging from -1 to -2.5 & dB over a wavelength range of 30 nm is demonstrated.

Keywords

CMOS integrated circuits; integrated optics; optical losses; optical waveguides; silicon-on-insulator; ultraviolet lithography; CMOS compatible silicon-on-insulator polarization rotator; deep ultraviolet lithography; insertion losses; polarization conversion efficiency; standard grating couplers; symmetry breaking; waveguide cross section; CMOS integrated circuits; Couplers; Fabrication; Gratings; Optical waveguides; Optimized production technology; Silicon; Integrated optics; polarization rotator; silicon-on-insulator (SOI);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2012.2218593

Filename

6301680