DocumentCode
1284081
Title
Frequency stabilisation of semiconductor laser using atomic absorption line under direct FSK
Author
Koizumi, S. ; Sato, T. ; Shimba, M.
Author_Institution
Fac. of Eng., Niigata Univ., Japan
Volume
24
Issue
1
fYear
1988
fDate
1/7/1988 12:00:00 AM
Firstpage
13
Lastpage
14
Abstract
The oscillation frequency of an AlGaAs laser diode is stabilised using the Rb-D2 absorption line (780 nm) under the direct frequency shift keying (FSK) condition. Only one side (mark or space) frequency signal is used to obtain the feedback signal for stabilisation in this system. The stability obtained is almost the same as that of the case without FSK
Keywords
III-V semiconductors; aluminium compounds; frequency shift keying; gallium arsenide; laser frequency stability; optical modulation; semiconductor junction lasers; 780 nm; AlGaAs; atomic absorption line; direct FSK; feedback signal; frequency signal; oscillation frequency; semiconductor laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
8132
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