Title :
Laser `direct writing´ of silicon pn junctions
Author :
Milne, D. ; Black, A. ; Wilson, John I. B. ; John, P.
Author_Institution :
Heriot-Watt Univ., Edinburgh
fDate :
1/7/1988 12:00:00 AM
Abstract :
Rectifying pn junctions have been deposited by a focused argon laser beam from silane and dopant gases on to oxidised silicon wafers. The characteristics depend on the deposition conditions and on the dopant gas content but are not those of ideal junctions, probably due to a nonabrupt interface from the present growth parameter values
Keywords :
chemical vapour deposition; elemental semiconductors; p-n homojunctions; silicon; solid-state rectifiers; Si; deposition conditions; dopant gas content; growth parameter values; laser direct writing; nonabrupt interface; pn junctions; rectifying junctions; silane;
Journal_Title :
Electronics Letters
