• DocumentCode
    1284293
  • Title

    Laser `direct writing´ of silicon pn junctions

  • Author

    Milne, D. ; Black, A. ; Wilson, John I. B. ; John, P.

  • Author_Institution
    Heriot-Watt Univ., Edinburgh
  • Volume
    24
  • Issue
    1
  • fYear
    1988
  • fDate
    1/7/1988 12:00:00 AM
  • Firstpage
    19
  • Lastpage
    20
  • Abstract
    Rectifying pn junctions have been deposited by a focused argon laser beam from silane and dopant gases on to oxidised silicon wafers. The characteristics depend on the deposition conditions and on the dopant gas content but are not those of ideal junctions, probably due to a nonabrupt interface from the present growth parameter values
  • Keywords
    chemical vapour deposition; elemental semiconductors; p-n homojunctions; silicon; solid-state rectifiers; Si; deposition conditions; dopant gas content; growth parameter values; laser direct writing; nonabrupt interface; pn junctions; rectifying junctions; silane;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    8136
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1284293