Low timing jitter of gain- and Q-switched laser diodes for high bit rate OTDM applications

Author

Shen, A. ; Bouchoule, S. ; Crozat, P. ; Mathoorasing, D. ; Lourtioz, J.M. ; Kazmierski, C.

Author_Institution

Inst. d´´Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France

Volume

33

Issue

22

fYear

1997

fDate

10/23/1997 12:00:00 AM

Firstpage

1875

Lastpage

1877

Abstract

High repetition rate picosecond pulses with low uncorrelated timing jitter (down to ~0.25 ps) have been generated at 1.55 μm from gain- and Q-switched InGaAsP lasers without external feedback. Experiments were carried out at multi-gigahertz frequencies on one- and two-section devices; timing jitter was estimated from spectral measurements. Sub-picosecond values were found above ~5 GHz for optimally-biased one-section DFB lasers in gain-switching. Values more than two times lower were obtained from Q-switched quantum well two-section lasers, with RF modulation applied to a fast absorber section

Keywords

III-V semiconductors; Q-switching; distributed feedback lasers; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; jitter; laser transitions; optical communication equipment; optical modulation; quantum well lasers; semiconductor lasers; time division multiplexing; 0.25 ps; 1.55 micron; 5 GHz; InGaAsP; InGaAsP lasers; LD; Q-switched laser diodes; RF modulation; fast absorber section; gain-switched laser diodes; high bit rate OTDM applications; high repetition rate ps pulses; low timing jitter; multi-gigahertz frequencies; one-section DFB lasers; picosecond pulses; quantum well two-section laser;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19971281

Filename

630332