Study of Randomly Distributed Charge Traps by Measuring Frequency- and Time-Dependence of a DNTT-Based MIS Capacitor

Author

Hayashi, Toshiaki ; Take, Naoya ; Nakano, Hayato ; Fujiwara, Akira ; Sekitani, Tsuyoshi ; Someya, Takao

Author_Institution

NTT Corp., Kanagawa, Japan

Volume

11

Issue

7

fYear

2015

fDate

Jul-15

Firstpage

604

Lastpage

609

Abstract

The frequency and time dependence of capacitance of dinaphtho[2,3-b:2´,3´-f]thieno[3,2-b]thiophene (DNTT)-based metal-insulator-semiconductor (MIS) capacitors were studied. The frequency spectra show a long and gradual slope over many orders of magnitude in frequency, and the time evolution in the subthreshold region exhibits a logarithmic dependence. These two phenomena are analyzed from a unified point of view on the basis of charge trapping models that were originally developed for Si-based MIS capacitors. The charge trapping model with a Gaussian-distributed surface potential in DNTT successfully reproduces both the frequency and time dependences with the same parameter set.

Keywords

MIS capacitors; electron traps; hole traps; organic semiconductors; DNTT based MIS capacitor; charge trapping; dinaphtho[2,3-b:2´,3´-f]thieno[3,2-b]thiophene; frequency-dependence measurement; metal-insulator-semiconductor capacitor; randomly distributed charge traps; time-dependence measurement; Capacitance; Capacitors; Charge carrier processes; Interface states; Semiconductor device measurement; Time-frequency analysis; Charge traps; metal–insulator–semiconductor (MIS) capacitor; organic semiconductor; random surface potential;

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2015.2419274

Filename

7078867