Analysis of heat conduction property in FinFETs using phonon Monte Carlo simulation

Author

Nur Adisusilo, Indra ; Kukita, Kentaro ; Kamakura, Yoshinari

Author_Institution

Div. of Electr., Electron. & Inf. Eng., Osaka Univ., Suita, Japan

fYear

2014

fDate

9-11 Sept. 2014

Firstpage

17

Lastpage

20

Abstract

A phonon transport simulator using a Monte Carlo method is used to analyze the heat conduction properties in FinFET structure. We compare the simulation results to those obtained from the conventional heat conduction equation based on the Fourier´s law, and discuss about the discrepancies attributed to ballistic transport effect. We also analyze the impact of additional heat path through gate contact, and show that it has a less significant but non-negligible contribution which could slightly reduce the hot spot temperature.

Keywords

MOSFET; Monte Carlo methods; ballistic transport; equivalent circuits; finite element analysis; heat conduction; phonons; semiconductor device models; FinFET; Fourier law; Monte Carlo method; ballistic transport; equivalent thermal circuit model; finite element method; gate contact; heat conduction; phonon transport simulator; FinFETs; Heat sinks; Heating; Logic gates; Monte Carlo methods; Phonons; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on

Conference_Location

Yokohama

ISSN

1946-1569

Print_ISBN

978-1-4799-5287-8

Type

conf

DOI

10.1109/SISPAD.2014.6931552

Filename

6931552