Accurate fringe capacitance model considering RSD and metal contact for realistic FinFETs and circuit performance simulation

Author

Kyeungkeun Choe ; TaeYoon An ; SoYoung Kim

Author_Institution

Coll. of Inf. & Commun. Eng., Sungkyunkwan Univ., Suwon, South Korea

fYear

2014

fDate

9-11 Sept. 2014

Firstpage

29

Lastpage

32

Abstract

In this paper, analytical gate fringe capacitance model of FinFETs including metal contact and raised source and drain (RSD) are developed. Each cross capacitance models are derived using conformal mapping and field integration. The proposed models are verified with a three-dimensional field solver, Raphael. By including the additional fringe capacitance from RSD and metal contact in BSIM-CMG platform, realistic transition frequency (f_T) and propagation delay of 9-stage ring oscillators are predicted and compared with those predicted by default BSIM-CMG capacitance models.

Keywords

MOSFET; capacitance; circuit simulation; semiconductor device models; 9-stage ring oscillators; FinFET; RSD; Raphael; accurate fringe capacitance model; circuit performance simulation; conformal mapping; field integration; metal contact; propagation delay; raised source and drain; realistic transition frequency; three-dimensional field solver; Capacitance; Couplings; FinFETs; Integrated circuit modeling; Logic gates; Metals; Solid modeling; Analytical model; BSIM-CMG; FinFETs; contact; fringe capacitance; parasitic; transition frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on

Conference_Location

Yokohama

ISSN

1946-1569

Print_ISBN

978-1-4799-5287-8

Type

conf

DOI

10.1109/SISPAD.2014.6931555

Filename

6931555