• DocumentCode
    128806
  • Title

    Advanced simulation of CBRAM devices with the level set method

  • Author

    Dorion, P. ; Cueto, O. ; Reyboz, M. ; Barbe, J.C. ; Grigoriu, A. ; Maday, Y.

  • Author_Institution
    CEA-LETI MINATEC, Univ. Grenoble Alpes, Grenoble, France
  • fYear
    2014
  • fDate
    9-11 Sept. 2014
  • Firstpage
    33
  • Lastpage
    36
  • Abstract
    A TCAD model for Chalcogenide based CBRAM is presented. This model starts from an existing model and uses an advanced level set method to follow the growth of the filament in the electrolyte. We couple the level set method with equations which model the cations migration and the electric field in the electrolyte and in the filament. We take into account silver clusters in the electrolyte in order to study their influence on switching time.
  • Keywords
    electrolytes; random-access storage; semiconductor device models; technology CAD (electronics); TCAD model; cation migration; chalcogenide based CBRAM; conductive-bridge random-access memory; electrolyte; level set method; Electrodes; Equations; Level set; Mathematical model; Numerical models; Silver; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
  • Conference_Location
    Yokohama
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4799-5287-8
  • Type

    conf

  • DOI
    10.1109/SISPAD.2014.6931556
  • Filename
    6931556
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=128806