Title :
Characterization of the Variable Retention Time in Dynamic Random Access Memory
Author :
Kim, Heesang ; Oh, Byoungchan ; Son, Younghwan ; Kim, Kyungdo ; Cha, Seon-Yong ; Jeong, Jae-Goan ; Hong, Sung-Joo ; Shin, Hyungcheol
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., Seoul, South Korea
Abstract :
To study the relationship between the original leakage current fluctuation and the detected variable retention time (VRT) from the retention test of dynamic random access memory (DRAM), we simulated the real procedure of the VRT measurement of DRAM. By investigating the results of the simulation, we proposed a new effective VRT measurement method based on the comparison between measurement and simulation. In addition, we investigated the characteristics of the VRT phenomenon in DRAM using the VRT characterization method developed in this study.
Keywords :
leakage currents; random-access storage; dynamic random access memory; leakage current fluctuation; variable retention time; Current measurement; Leakage current; Logic gates; Random access memory; Semiconductor device measurement; Temperature measurement; Time measurement; Dynamic random access memory (DRAM); gate-induced drain leakage (GIDL); leakage current; location of trap; random telegraph noise (RTN); variable retention time (VRT);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2160066
