DocumentCode :
1288722
Title :
Simulation of quantum transport in quantum devices with spatially varying effective mass
Author :
Tsuchiya, Hideaki ; Ogawa, Matsuto ; Miyoshi, Tanroku
Author_Institution :
Dept. of Electron. Eng., Kobe Univ., Japan
Volume :
38
Issue :
6
fYear :
1991
fDate :
6/1/1991 12:00:00 AM
Firstpage :
1246
Lastpage :
1252
Abstract :
The authors report progress in quantum-mechanical simulation based on the Wigner function model. An exact nonlocal formulation in the Wigner representation due to a spatially varying effective mass and its discretization for numerical calculation are discussed. To verify the validity of such a formulation, the current-voltage characteristics of resonant tunneling diodes are simulated to compare with the conventional Wigner function model. The authors also point out the importance of self-consistent calculation in the electrostatic potential for precise device simulation. The emphasize that the Wigner function model is superior to the alternative method based on the transmission probability method even for the static simulation of quantum transport
Keywords :
resonant tunnelling devices; semiconductor device models; tunnel diodes; Wigner function model; Wigner representation; current-voltage characteristics; discretization; electrostatic potential; exact nonlocal formulation; numerical calculation; precise device simulation; quantum transport in quantum devices; quantum-mechanical simulation; resonant tunneling diodes; self-consistent calculation; spatially varying effective mass; static simulation of quantum transport; Current-voltage characteristics; Diodes; Effective mass; Electrodes; Electrostatics; Equations; Helium; Heterojunctions; Optical devices; Tunneling;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.81613
Filename :
81613
Link To Document :
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