DC conduction and low-frequency noise characteristics of GaAlAs/GaAs single heterojunction bipolar transistors at room temperature and low temperatures

Author

Raman, V.K. ; Viswanathan, C.R. ; Kim, Michael E.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

39

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

1054

Lastpage

1058

Abstract

The DC conduction and low-frequency noise characteristics of GaAlAs/GaAs single heterojunction bipolar transistors (HBTs) have been investigated at room temperature and at temperatures down to 5 K. The collector current dependence of the current gain was investigated at various temperatures. The low-frequency noise characteristics exhibit both 1/f and generation-recombination components. The noise characteristics are sensitive to changes in base current and insensitive to changes in collector-emitter voltage, thus suggesting that the noise source is located in the vicinity of the emitter-base heterojunction. The noise spectrum follows a simple model based on minority carrier trapping effects at the heterointerface

Keywords

III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; heterojunction bipolar transistors; random noise; 5 K; DC conduction; GaAlAs-GaAs; HBT; base current; collector current dependence; collector-emitter voltage; current gain; emitter-base heterojunction; generation-recombination components; heterointerface; l/f component; low temperatures; low-frequency noise characteristics; minority carrier trapping effects; noise spectrum; room temperature; single heterojunction bipolar transistors; Doping; Double heterojunction bipolar transistors; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Low-frequency noise; Noise level; Space technology; Temperature dependence; Temperature sensors;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.81681

Filename

81681