DocumentCode :
1290521
Title :
Low noise In/sub 0.32/(AlGa)/sub 0.68/As/In/sub 0.43/Ga/sub 0.57/As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density
Author :
Whelan, C.S. ; Hoke, W.F. ; McTaggart, R.A. ; Lardizabal, M. ; Lyman, P.S. ; Marsh, P.F. ; Kazior, T.E.
Author_Institution :
Adv. Device Center, Raytheon RF Components, Andover, MA, USA
Volume :
21
Issue :
1
fYear :
2000
Firstpage :
5
Lastpage :
8
Abstract :
A double-pulse-doped InAlGaAs/In/sub 0.43/Ga/sub 0.57/As metamorphic high electron mobility transistor (MHEMT) on a GaAs substrate is demonstrated with state-of-the-art noise and power performance, This 0.15 μm T-gate MHEMT exhibits high on- and off-state breakdown (V/sub ds/>6 V and V/sub dg/>13 V, respectively) which allows biasing at V/sub ds/>5 V. The 0.6 mm device shows >27 dBm output power (850 mW/mm) at 35 GHz-the highest reported power density of any MHEMT. Additionally, a smaller gate periphery 2×50 μm (0.1 mm) 43% MHEMT exhibits a Fmin=1.18 dB and 10.7 dB associated gain at 25 GHz, and also is the first noise measurement of a -40% In MHEMT. A double recess process with selective etch chemistries provides for high yields.
Keywords :
III-V semiconductors; aluminium compounds; doping profiles; etching; gallium arsenide; indium compounds; millimetre wave field effect transistors; power HEMT; semiconductor device breakdown; semiconductor device noise; 0.15 micron; 10.7 dB; 25 GHz; 35 GHz; III-V semiconductors; In/sub 0.32/(AlGa)/sub 0.68/As-In/sub 0.43/Ga/sub 0.57/As; T-gate MHEMT; biasing; double recess process; double-pulse-doped structure; gate periphery; metamorphic HEMT; noise measurement; off-state breakdown; on-state breakdown; output power density; power density; selective etch chemistries; Chemistry; Electric breakdown; Etching; Gain; Gallium arsenide; HEMTs; MODFETs; Noise measurement; Power generation; mHEMTs;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.817435
Filename :
817435
Link To Document :
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