• DocumentCode
    1290729
  • Title

    Monolithic 40-GHz Passively Mode-Locked AlGaInAs–InP 1.55- \\mu m MQW Laser With Surface-Etched Distributed Bragg Reflector

  • Author

    Hou, Lianping ; Dylewicz, Rafal ; Haji, Moss ; Stolarz, Piotr ; Qiu, Bocang ; Bryce, A. Catrina

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
  • Volume
    22
  • Issue
    20
  • fYear
    2010
  • Firstpage
    1503
  • Lastpage
    1505
  • Abstract
    We have fabricated 40-GHz passively mode-locked AlGaInAs-InP 1.55- lasers integrated with surface-etched distributed Bragg mirrors. Numerically optimized gratings provide low-scattering losses and accurate wavelength control. The lasers produce 4.46-ps Gaussian pulses with time-bandwidth product of 0.47.
  • Keywords
    Bragg gratings; Gaussian distribution; III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; etching; gallium arsenide; indium compounds; laser mode locking; optical fabrication; optical pulse generation; quantum well lasers; AlGaInAs-InP; Gaussian pulse; MQW laser; distributed Bragg mirrors; distributed Bragg reflector; frequency 40 GHz; gratings; low-scattering losses; passive mode-locking; surface etching; time 4.46 ps; time-bandwidth product; wavelength 1.55 mum; wavelength control; Distributed Bragg reflectors; Dry etching; Gratings; Indium phosphide; Laser mode locking; Masers; Optical surface waves; Quantum well devices; Semiconductor lasers; Surface emitting lasers; AlGaInAs–InP material; mode-locked laser; monolithic integrated circuits; surface-etched distributed Bragg reflector;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2010.2064764
  • Filename
    5545363
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1290729