• DocumentCode
    1290857
  • Title

    Experimental verification of pattern selection for noise characterization

  • Author

    Van den Bosch, S. ; Martens, L.

  • Author_Institution
    Dept. of Inf. Technol., Ghent Univ., Belgium
  • Volume
    48
  • Issue
    1
  • fYear
    2000
  • fDate
    1/1/2000 12:00:00 AM
  • Firstpage
    156
  • Lastpage
    158
  • Abstract
    A comparison is made between different pattern-selection procedures for noise characterization based on measurements of cold-FETs in a common-source configuration. The measurements were performed using an automated noise setup with one electro-mechanical tuner. The results confirm that a recently developed two-step pattern allows more accurate noise-parameter determination compared to existing practice. The significance of this paper lies in the confirmation of the simulation results presented earlier
  • Keywords
    Schottky gate field effect transistors; microwave field effect transistors; semiconductor device models; semiconductor device noise; automated noise setup; cold-FETs; common-source configuration; electro-mechanical tuner; noise characterization; noise-parameter determination; pattern selection; simulation results; Frequency; Gallium arsenide; Impedance; Length measurement; Noise figure; Noise generators; Noise measurement; Performance evaluation; Stability; Tuners;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.817485
  • Filename
    817485