DocumentCode :
1290857
Title :
Experimental verification of pattern selection for noise characterization
Author :
Van den Bosch, S. ; Martens, L.
Author_Institution :
Dept. of Inf. Technol., Ghent Univ., Belgium
Volume :
48
Issue :
1
fYear :
2000
fDate :
1/1/2000 12:00:00 AM
Firstpage :
156
Lastpage :
158
Abstract :
A comparison is made between different pattern-selection procedures for noise characterization based on measurements of cold-FETs in a common-source configuration. The measurements were performed using an automated noise setup with one electro-mechanical tuner. The results confirm that a recently developed two-step pattern allows more accurate noise-parameter determination compared to existing practice. The significance of this paper lies in the confirmation of the simulation results presented earlier
Keywords :
Schottky gate field effect transistors; microwave field effect transistors; semiconductor device models; semiconductor device noise; automated noise setup; cold-FETs; common-source configuration; electro-mechanical tuner; noise characterization; noise-parameter determination; pattern selection; simulation results; Frequency; Gallium arsenide; Impedance; Length measurement; Noise figure; Noise generators; Noise measurement; Performance evaluation; Stability; Tuners;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.817485
Filename :
817485
Link To Document :
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