DocumentCode
1291248
Title
Status of InP HEMT technology for microwave receiver applications
Author
Smith, Phillip M.
Author_Institution
Sanders Associates Inc., Nashua, NH, USA
Volume
44
Issue
12
fYear
1996
fDate
12/1/1996 12:00:00 AM
Firstpage
2328
Lastpage
2333
Abstract
The current status of InP-based high electron mobility transistor (HEMT) technology for low noise amplification at frequencies up to more than 100 GHz is presented. Following a review of recent advances industry-wide in both device and circuit performance, two issues which will pace the rate at which this new technology can be inserted into microwave systems-material/process maturity and long-term reliability-are discussed
Keywords
HEMT integrated circuits; III-V semiconductors; field effect MIMIC; field effect MMIC; hybrid integrated circuits; indium compounds; integrated circuit design; integrated circuit reliability; microwave receivers; millimetre wave receivers; 18 to 100 GHz; HEMT technology; III-V semiconductors; InP; MMICs; hybrid ICs; long-term reliability; low noise amplification; material/process maturity; microwave receiver applications; Frequency; HEMTs; Indium phosphide; MMICs; Microwave amplifiers; Microwave integrated circuits; Microwave technology; Noise figure; Noise measurement; Performance loss;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.554545
Filename
554545
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