High saturation power 1.3-μm MQW electroabsorption waveguide modulators on GaAs substrates

Author

Loi, K.K. ; Shen, L. ; Wieder, H.H. ; Chang, W.S.C.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA

Volume

7

Issue

10

fYear

1997

Firstpage

320

Lastpage

322

Abstract

An analog InGaAs-InAlAs multiple-quantum-well electroabsorption waveguide modulator operating at 1.32-μm wavelength has been designed, fabricated, and characterized for the first time on a GaAs substrate. A typical 3-μm-wide 115-μm-long device exhibits a high optical saturation power in excess of 17 mW and a 3-dB electrical bandwidth of 20 GHz. An equivalent half-wave voltage V/sub /spl pi// of 2.8 V has also been achieved.

Keywords

III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical communication equipment; optical waveguides; semiconductor quantum wells; substrates; 1.3 to 1.32 micron; 17 mW; 2.8 V; 20 GHz; GaAs; GaAs substrates; InGaAs-InAlAs; MQW electroabsorption waveguide modulators; high saturation power; multiple-quantum-well modulator; Gallium arsenide; Indium compounds; Insertion loss; Optical modulation; Optical refraction; Optical saturation; Optical variables control; Optical waveguides; Quantum well devices; Substrates;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.631188

Filename

631188