Title :
A guide to short-channel effects in MOSFETs
Author :
Duvvury, Charvaka
Author_Institution :
Texas Instrum. Inc., Houston, TX, USA
Abstract :
Short-channel effects form a very important consideration for the performance of very-large-scale integrated circuits built with ultrasmall devices. Definitions of each of the observed short-channel effects in MOSFETs are given by describing their respective phenomenological meanings. The impact of these parameters on the measured I-V curves, as well as the differentiation between long-channel and short-channel behavior from the measured data, are discussed.
Keywords :
VLSI; field effect integrated circuits; insulated gate field effect transistors; I/V curves; MOSFETs; VLSI; monolithic IC; short-channel effects; very-large-scale integrated circuits; Equations; Logic gates; MOSFETs; Subthreshold current;
Journal_Title :
Circuits and Devices Magazine, IEEE
DOI :
10.1109/MCD.1986.6311897
