• DocumentCode
    1292467
  • Title

    A 2.4-GHz silicon-on-sapphire CMOS low-noise amplifier

  • Author

    Johnson, R.A. ; Chang, C.E. ; de la Houssaye, P.R. ; Wood, M.E. ; Garcia, G.A. ; Asbeck, P.M. ; Lagnado, I.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
  • Volume
    7
  • Issue
    10
  • fYear
    1997
  • fDate
    10/1/1997 12:00:00 AM
  • Firstpage
    350
  • Lastpage
    352
  • Abstract
    A low-noise amplifier operating at 2.4 GHz has been fabricated with MOSFETs in silicon-on-sapphire technology. The amplifier has a 2.8-dB noise figure, 10-dB gain, and 14-dBm output referred IP3 with 14-mW power dissipation. The amplifier was matched for minimum noise with on-chip spiral inductors and capacitors
  • Keywords
    CMOS analogue integrated circuits; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; integrated circuit noise; 10 dB; 14 mW; 2.4 GHz; 2.8 dB; SOS CMOS LNA; SOS MOSFET technology; Si-Al2O3; UHF IC; low-noise amplifier; onchip spiral inductors; CMOS technology; Circuit noise; Circuit simulation; FETs; Low-noise amplifiers; Microwave circuits; Noise figure; Optical amplifiers; Power dissipation; Spirals;
  • fLanguage
    English
  • Journal_Title
    Microwave and Guided Wave Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1051-8207
  • Type

    jour

  • DOI
    10.1109/75.631198
  • Filename
    631198
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1292467