Title :
A 230-Watt S-band SiGe heterojunction bipolar transistor
Author :
Potyraj, Paul A. ; Petrosky, Kenneth J. ; Hobart, Karl D. ; Kub, Francis J. ; Thompson, Phillip E.
Author_Institution :
Northrop Grumman ESSD, Baltimore, MD, USA
fDate :
12/1/1996 12:00:00 AM
Abstract :
Large-area Si/Si1-xGex heterojunction bipolar transistors (HBTs) have been demonstrated with record output power at S-Band. Under pulsed conditions in class C operation, a saturated power in excess of 230 W was achieved at 2.8 GHz. At 200 W the devices exhibited a collector efficiency of 46% and a power gain of 6.9 dB. Devices with implanted Si bases had comparable gain, but only 35% efficiency at 150 W, and saturated at 180 W. In class A operation, 13.5 dB gain was demonstrated at 3.1 GHz on smaller devices. For high fmax, a self-aligned silicided polysilicon-emitter structure was used in conjunction with a graded Si1-xGex base. Variable temperature dc tests and accelerated life tests have indicated no reliability problems. The results indicate for the first time that Si/SiGe HBTs are suitable for high-power, high-frequency applications
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; life testing; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device reliability; semiconductor device testing; semiconductor materials; silicon; 13.5 dB; 150 W; 2.8 GHz; 230 W; 3.1 GHz; 35 percent; 46 percent; 6.9 dB; S-band; Si-SiGe; accelerated life tests; class C operation; collector efficiency; heterojunction bipolar transistor; output power; power gain; pulsed conditions; saturated power; self-aligned silicided polysilicon-emitter structure; variable temperature dc tests; Bipolar transistors; Costs; Doping; Frequency; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave devices; Photonic band gap; Silicon germanium;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
