Pulsed device measurements and applications

Author

Scott, Jonathan ; Rathmell, James Grantley ; Parker, Anthony ; Sayed, Mohamed

Author_Institution

Dept. of Electr. Eng., Sydney Univ., NSW, Australia

Volume

44

Issue

12

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

2718

Lastpage

2723

Abstract

A pulsed measurement system can provide more than just isothermal characteristic data. An off-the-shelf system can determine rapidly the timing necessary for both pulsed-I-V and pulsed-S-parameter measurements to be isothermal and isodynamic. Instantaneous channel temperature may be determined. Thermal and charge-trapping effects can be separated and time constants measured. Full gain-derivative surfaces can be obtained far more efficiently than by spectral sweep measurements. Characteristics and transient effects following excursions beyond the safe-operating-area and into breakdown may be observed nondestructively

Keywords

S-parameters; automatic test equipment; microwave measurement; microwave transistors; semiconductor device testing; timing; charge-trapping effects; gain-derivative surfaces; instantaneous channel temperature; isodynamic characteristic data; isothermal characteristic data; pulsed device measurements; pulsed measurement system; pulsed-I-V measurements; pulsed-S-parameter measurements; thermal effects; time constants measur; timing; transient effects; Current measurement; Electric breakdown; Gallium arsenide; Isothermal processes; Pulse measurements; Scattering parameters; Temperature; Time measurement; Timing; Velocity measurement;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.554657

Filename

554657