DocumentCode
1293555
Title
Fabrication of silicide structures by silicide direct-write electron-beam lithography process (SiDWEL) on thin silicon nitride membranes and on tantalum substrates
Author
Lavallee, E. ; Beavais, J. ; Drouin, D. ; Beerens, J. ; Morris, D. ; Chaker, M.
Author_Institution
Dept. de Genie Electr. et de Genie Inf., Sherbrooke Univ., Que., Canada
Volume
35
Issue
23
fYear
1999
fDate
11/11/1999 12:00:00 AM
Firstpage
2027
Lastpage
2028
Abstract
To achieve optimal resolution for microelectronic devices and nanostructures fabrication, a study has been carried out into the use of the silicide direct-write electron-beam lithography process (SiDWEL) for silicon nitride membranes and thick tantalum layers. Results demonstrate that the threshold doses and resolution of the SiDWEL lithography technique are substrate-independent
Keywords
electron beam lithography; metallisation; nanotechnology; SiN; Ta; microelectronic device; nanostructure fabrication; silicide direct write electron beam lithography; silicon nitride membrane; tantalum substrate;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19991394
Filename
819039
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