DocumentCode
1293748
Title
Analysis of the influence of MOS device geometry on predicted SEU cross sections
Author
Warren, Kevin ; Massengill, Lloyd ; Schrimpf, Ron ; Barnaby, Hugh
Author_Institution
Dept. of Electr. & Comput. Eng., Vanderbilt Univ., Nashville, TN, USA
Volume
46
Issue
6
fYear
1999
Firstpage
1363
Lastpage
1369
Abstract
An investigation into the single-event sensitive area geometry of a body-tied-to-source (BTS) SOI nMOS transistor has been performed through a novel simulation technique. Results are presented which demonstrate the influence of spatial variations in charge collection efficiency on the shape of the predicted upset cross section curve. Observations are made on a technique for inferring sensitive area or intra-cell collection efficiencies from cross section data.
Keywords
MOSFET; ion beam effects; semiconductor device models; silicon-on-insulator; MOS device geometry; SEU cross sections; SOI nMOS transistor; body-tied-to-source device; charge collection efficiency; intra-cell collection efficiencies; simulation technique; single-event sensitive area geometry; spatial variations; upset cross section curve; Circuit simulation; Computational geometry; Computational modeling; MOS devices; MOSFETs; Predictive models; Shape; Silicon on insulator technology; Single event upset; Solid modeling;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.819094
Filename
819094
Link To Document