• DocumentCode
    1293774
  • Title

    On the role of energy deposition in triggering SEGR in power MOSFETs

  • Author

    Selva, Luis E. ; Swift, Gary M. ; Taylor, William A. ; Edmonds, Larry D.

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • Volume
    46
  • Issue
    6
  • fYear
    1999
  • Firstpage
    1403
  • Lastpage
    1409
  • Abstract
    Single event gate rupture (SEGR) was studied using three types of power MOSFET devices with ions having incident linear energy transfers (LETs) in silicon from 26 to 82 MeV/spl middot/cm/sup 2//mg. Results are: (1) consistent with Wrobel´s oxide breakdown for V/sub DS/=0 volts (for both normal incidence and angle); and (2) when V/sub GS/=0 volts, energy deposited near the Si/SiO/sub 2/ interface is more important than the energy deposited deeper in the epi.
  • Keywords
    ion beam effects; power MOSFET; semiconductor device breakdown; semiconductor device reliability; SEGR; Si-SiO/sub 2/; Wrobel´s oxide breakdown; energetic heavy ions; energy deposition; incident linear energy transfers; power MOSFETs; single event gate rupture; Dielectric substrates; Electric breakdown; Epitaxial layers; Laboratories; MOSFETs; Propulsion; Silicon; Space technology; Testing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.819099
  • Filename
    819099
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1293774