• DocumentCode
    1293778
  • Title

    BN/Graphene/BN Transistors for RF Applications

  • Author

    Wang, Han ; Taychatanapat, Thiti ; Hsu, Allen ; Watanabe, Kenji ; Taniguchi, Takashi ; Jarillo-Herrero, Pablo ; Palacios, Tomas

  • Author_Institution
    Massachusetts Inst. of Technol., Cambridge, MA, USA
  • Volume
    32
  • Issue
    9
  • fYear
    2011
  • Firstpage
    1209
  • Lastpage
    1211
  • Abstract
    In this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched between a substrate and a gate dielectric, and is hence very promising to enable the next generation of high-frequency graphene RF electronics.
  • Keywords
    field effect transistors; graphene; RF applications; field-effect transistor; gate dielectric; high carrier velocity; high-frequency graphene RF electronics; substrate; transistors; Aluminum oxide; Dielectrics; FETs; Logic gates; Radio frequency; Substrates; Graphene field-effect transistors (GFETs); hexagonal boron nitride (hBN); radio frequency (RF);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2160611
  • Filename
    5978801
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1293778