Radiation effects on advanced flash memories

Author

Nguyen, D.N. ; Guertin, S.M. ; Swift, G.M. ; Johnston, A.H.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

46

Issue

6

fYear

1999

Firstpage

1744

Lastpage

1750

Abstract

Radiation tests of advanced flash memories including, multi-level flash technology, are compared with results from previous generations. Total dose failure levels are comparable to or lower than those of older technologies, but are likely still caused by degradation of the internal charge pump. Small numbers of read errors were observed during single event tests of the multi-level devices that appear to be caused by shifts in the sense amplifier detection levels or cell threshold shifts rather than loss of electrons off the floating gate.

Keywords

failure analysis; flash memories; integrated circuit reliability; integrated circuit testing; radiation hardening (electronics); advanced flash memories; cell threshold shifts; degradation; floating gate; internal charge pump; multi-level devices; multi-level flash technology; radiation effects; radiation tests; read errors; sense amplifier detection levels; single event tests; total dose failure levels; Charge pumps; Circuits; Flash memory; Laboratories; Propulsion; Radiation effects; Testing; Tunneling; Voltage; Writing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.819148

Filename

819148