DocumentCode
1294683
Title
Use of vacuum tubes in test instrumentation for measuring characteristics of fast high-voltage semiconductor devices
Author
Berning, David
Author_Institution
Electron Devices Div., NBS, Washington, DC, USA
Issue
3
fYear
1981
Firstpage
226
Lastpage
227
Abstract
Circuits are described that permit measurement of fast events occurring in power semiconductors. These circuits were developed for the dynamic characterization of transistors used in inductive-load switching applications. Fast voltage clamping using vacuum diodes is discussed, and reference is made to a unique circuit that was built for performing nondestructive, reverse-bias, second-breakdown tests on transistors.
Keywords
bipolar transistors; diodes; nondestructive testing; power transistors; semiconductor device testing; semiconductor switches; inductive-load switching; nondestructive, reverse-bias, second-breakdown tests; power semiconductors; transistors; vacuum diodes; voltage clamping; Clamps; Current measurement; Electric breakdown; Electron tubes; Semiconductor device measurement; Transistors; Voltage measurement;
fLanguage
English
Journal_Title
Instrumentation and Measurement, IEEE Transactions on
Publisher
ieee
ISSN
0018-9456
Type
jour
DOI
10.1109/TIM.1981.6312384
Filename
6312384
Link To Document