• DocumentCode
    1294774
  • Title

    Broad-band high-speed microwave power sensor using hot carriers in semiconductor

  • Author

    Kikuchi, Kazuo ; Oshimoto, Ainosuke

  • Author_Institution
    Dept. of Electrical Engng., Nat. Defense Acad., Kanagawa, Japan
  • Issue
    4
  • fYear
    1981
  • Firstpage
    238
  • Lastpage
    242
  • Abstract
    The principal characteristics of a semiconductor power sensor based upon the temperature rise of hot carriers are investigated. A method of designing a broad-band coaxial mount is described. The hot-carrier power sensor is fabricated by a whisker contact to p-type germanium. A sensor using optimum resistivity results in a noise equivalent power of -58 dBm/Hz1/2 with a 60-dB dynamic range. A broad-band-matched mount, having an average VSWR of 1.1:1 was attained for the frequency range from 1 to 12 GHz.
  • Keywords
    elemental semiconductors; germanium; hot carriers; microwave detectors; microwave measurement; solid-state microwave devices; 1 to 12 GHz; VSWR; broad-band coaxial mount; broad-band-matched mount; high speed microwave power sensor; hot-carrier power sensor; noise equivalent power; p-Ge; semiconductor power sensor; whisker contact; Broadband communication; Conductivity; Dynamic range; Hot carriers; Microwave measurements; Noise; Temperature sensors;
  • fLanguage
    English
  • Journal_Title
    Instrumentation and Measurement, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9456
  • Type

    jour

  • DOI
    10.1109/TIM.1981.6312398
  • Filename
    6312398
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1294774