Title :
High-power AlGaInP three-ridge type laser diode array
Author :
Valster, A. ; Andre, J.P. ; Dupont-Nivet, E. ; Martin, G.M.
Author_Institution :
Philips Res. Labs., Eindhoven
fDate :
3/17/1988 12:00:00 AM
Abstract :
A three ridge type GaInP/AlGaInP visible light emitting laser diode array grown by AP-OMVPE has been achieved. A pulsed maximum output power of 108 mW is obtained from this laser array without the use of facet coatings. The pulsed threshold current is 290 mA and the external differential efficiency is 0.75 W/A
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor junction lasers; vapour phase epitaxial growth; 108 mW; 290 mA; AP-OMVPE; GaInP-AlGaInP; external differential efficiency; facet coatings; pulsed maximum output power; pulsed threshold current; visible light emitting laser diode array;
Journal_Title :
Electronics Letters
