DocumentCode :
1295367
Title :
Internal stress and elastic modulus measurements on micromachined 3C-SiC thin films
Author :
Mehregany, Mehran ; Tong, Lijun ; Matus, Lawrence G. ; Larkin, David J.
Author_Institution :
Dept. of Electr. Eng. & Appl. Phys., Case Western Reserve Univ., Cleveland, OH, USA
Volume :
44
Issue :
1
fYear :
1997
fDate :
1/1/1997 12:00:00 AM
Firstpage :
74
Lastpage :
79
Abstract :
Fabrication of epitaxial 3C-SiC microstructures by bulk micromachining of the underlying silicon substrate was investigated. Initial studies of the mechanical properties of epitaxial 3C-SiC films deposited on silicon were carried out on microstructures fabricated by bulk micromachining of the silicon substrate to evaluate the potential of these films for micromechanics. Residual stress and biaxial modulus of 3C-SiC films were measured by load-deflection measurements of suspended diaphragms. The film´s residual stress was tensile with an average of 212 MPa, while the in-plane biaxial modulus averaged 441 GPa
Keywords :
elastic moduli; internal stresses; micromachining; micromechanical devices; semiconductor epitaxial layers; semiconductor materials; silicon compounds; SiC; biaxial modulus; bulk micromachining; elastic modulus; internal stress; load-deflection measurements; mechanical properties; micromechanics; residual stress; suspended diaphragms; Fabrication; Internal stresses; Mechanical factors; Micromachining; Microstructure; Residual stresses; Semiconductor films; Silicon; Stress measurement; Substrates;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.554795
Filename :
554795
Link To Document :
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