A four-channel, low-power CMOS charge preamplifier for silicon detectors with medium value of capacitance

Author

Randazzo, N. ; Russo, G.V. ; Presti, D. Lo ; Panebianco, S. ; Petta, C. ; Reito, S.

Author_Institution

Dipartimento di Fisica, Catania Univ., Italy

Volume

44

Issue

1

fYear

1997

fDate

2/1/1997 12:00:00 AM

Firstpage

31

Lastpage

35

Abstract

We present a low-power CMOS charge preamplifier, suitable for use with silicon detectors having a medium value of capacitance. Noise considerations and a long decay time of the output signal command the use of unusually large devices such as an input transistor having W=10000 μm and a 7-MΩ feedback resistor. Both of these devices were integrated inside the chip. We present and compare theoretical predictions together with the results of post-layout simulation and the measurements obtained

Keywords

CMOS integrated circuits; detector circuits; electron device noise; nuclear electronics; preamplifiers; silicon radiation detectors; 7 Mohm; Si detectors; chip; feedback resistor; four-channel low-power CMOS charge preamplifier; input transistor; medium capacitance detectors; noise; post-layout simulation; Capacitance; Detectors; Electromagnetic interference; Linearity; Noise shaping; Power dissipation; Preamplifiers; Resistors; Silicon; Working environment noise;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.554820

Filename

554820