High frequency GaN-based pulse generator with active T/R switch circuit

Author

Boni, Enrico ; Bassi, L. ; Cellai, Andrea

Author_Institution

Dipt. di Ing. dell´Inf., Univ. di Firenze, Florence, Italy

fYear

2014

fDate

3-6 Sept. 2014

Firstpage

1595

Lastpage

1598

Abstract

High frequency ultrasound systems capable of high spatial resolution are commonly used for small biological structures imaging and non-destructive testing. For transducers operating around 50MHz central frequency, excitation pulses with amplitude of several tens of Volts and 100V/ns slew rate are needed. Different solutions have been proposed to isolate the receive Low Noise Amplifier (LNA) from the transmission signal (T/R switch). This paper proposes a high frequency transmit (TX) circuit with a T/R switch capable of overcoming the typical limitations of previous solutions.

Keywords

III-V semiconductors; acoustic noise; amplifiers; gallium compounds; pulse generators; switches; ultrasonic transducers; wide band gap semiconductors; active T-R switch circuit; biological structures imaging; excitation pulses; frequency 50 MHz; high frequency pulse generator; high frequency transmit circuit; high frequency ultrasound systems; low noise amplifier; nondestructive testing; spatial resolution; transducers; transmission signal switch circuit; Bandwidth; Bridge circuits; Gallium nitride; MOSFET; Switches; Ultrasonic imaging; GaN FET; High Frequency Ultrasound; T/R switch;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium (IUS), 2014 IEEE International

Conference_Location

Chicago, IL

Type

conf

DOI

10.1109/ULTSYM.2014.0395

Filename

6932046