Title :
High power operation of real refractive index guided self-aligned AlGaInP laser diodes with window structure
Author :
Onishi, T. ; Imafuji, O. ; Fukuhisa, T. ; Kobayashi, Y. ; Yuri, M. ; Mannoh, M. ; Yoshikawa, A. ; Itoh, K.
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
fDate :
12/9/1999 12:00:00 AM
Abstract :
A window-mirror structure has been applied by Zn diffusion to real refractive index guided self-aligned AlGaInP laser diodes for the first time. Both a high catastrophic optical damage level of 152 mW and a high slope efficiency of 0.83 W/A have been obtained, resulting in an extremely low operating current of 225 mA, for a pulse output power of 150 mW at room temperature
Keywords :
III-V semiconductors; aluminium compounds; diffusion; gallium compounds; indium compounds; laser mirrors; optical windows; refractive index; semiconductor lasers; 150 mW; 152 mW; 225 mA; AlGaInP; Zn; Zn diffusion; extremely low operating current; high catastrophic optical damage level; high power operation; high slope efficiency; pulse output power; real refractive index guided self-aligned AlGaInP laser diodes; room temperature; window structure; window-mirror structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991457
