• DocumentCode
    129709
  • Title

    Devolopment of focused IVUS transducer using PMN-PT single crystal

  • Author

    Feifei Guo ; Cheng Liu ; Yaoheng Yang ; Lei Sun ; Bin Yang ; Yan Chen ; Jiyan Dai

  • Author_Institution
    Interdiscipl. Div. of Biomed. Eng., Hong Kong Polytech. Univ., Hong Kong, China
  • fYear
    2014
  • fDate
    3-6 Sept. 2014
  • Firstpage
    97
  • Lastpage
    100
  • Abstract
    The PMN-PT based high-frequency side-looking focused IVUS transducers were fabricated successfully by a mechanical dimpling technique and their performance was tested. Compared to the flat transducer, the focused transducer with 31 MHz center frequency showed superior -6 dB bandwidth (52%) and axial/lateral resolutions (28/470 μm). However, the average insertion loss of focused transducer at 35 MHz is around -21.53 dB which is little higher than that of flat one with -18.12 dB at 32 MHz. The improved imaging resolutions, especially axial resolution, can give more detailed vessel microstructure information on vulnerable atherosclerosis compared to conventional transducer. These results show that side-looking dimpled focused IVUS transducers are promising for IVUS medical imaging in vulnerable plaque diagnosis.
  • Keywords
    biomedical ultrasonics; crystal microstructure; lead compounds; ultrasonic focusing; ultrasonic imaging; ultrasonic transducers; IVUS medical imaging; PMN-PT based high-frequency side-looking focused IVUS transducers; PMN-PT single crystals; Pb(Mg0.67Nb0.33)O3-PbTiO3; axial-lateral resolution; focused transducers; frequency 31 MHz; imaging resolutions; mechanical dimpling technique; vessel microstructure information; vulnerable atherosclerosis; vulnerable plaque diagnosis; Attenuation; Biomedical imaging; Damping; Educational institutions; Image resolution; Sun; Transducers; PMN-PT single crystal; atherosclerosis; focused IVUS transducer; mechanical dimpling technique;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium (IUS), 2014 IEEE International
  • Conference_Location
    Chicago, IL
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2014.0025
  • Filename
    6932167