DC and AC characteristics of a nonalloyed delta-doped MESFET by atomic layer epitaxy

Author

Hashemi, M. ; McDermott, B. ; Mishra, Umesh K. ; Ramdani, J. ; Morris, A. ; Hauser, John R. ; Bedair, Salah M.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

12

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

258

Lastpage

260

Abstract

The growth and fabrication of a nonalloyed delta-doped FET entirely grown by atomic layer epitaxy are reported. The DC and RF performances are shown to be comparable to similar devices fabricated on materials grown by other techniques. FETs having a gate length of 1.5 mu m show transconductances as high as 144 mS/mm at a current density of 460 mA/mm. The breakdown voltage for these devices is between 20 and 25 V for a gate-to-drain spacing of 1.6 mu m. An f/sub T/ and f/sub max/ of 13 and 19 GHz were obtained respectively. These values are among the highest values reported for MESFETs with similar geometry.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; atomic layer epitaxial growth; gallium arsenide; semiconductor growth; solid-state microwave devices; 1.5 micron; 1.6 micron; 13 GHz; 19 GHz; 20 to 25 V; AC characteristics; ALE; DC characteristics; GaAs; RF performances; atomic layer epitaxy; breakdown voltage; current density; fabrication; gate length; gate-to-drain spacing; growth; nonalloyed delta-doped MESFET; transconductances; Atomic layer deposition; Current density; Epitaxial growth; FETs; Fabrication; Gallium arsenide; MESFETs; Molecular beam epitaxial growth; Radio frequency; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.82053

Filename

82053