DocumentCode
1297161
Title
High-frequency time-dependent breakdown of SiO/sub 2/
Author
Rosenbaum, Elyse ; Hu, Chenming
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Volume
12
Issue
6
fYear
1991
fDate
6/1/1991 12:00:00 AM
Firstpage
267
Lastpage
269
Abstract
The time-dependent dielectric breakdown of thin oxides (8.6-11 nm) are compared under DC, pulse, and bipolar pulse conditions for frequencies up to 4 MHz. Lifetime under unipolar pulse conditions does not deviate largely from that under DC conditions; however, lifetime under bipolar stress conditions increases by a factor of 40 to 100 at frequencies above 10 kHz. The field accelerations of breakdown time are similar for DC and pulse stressing.<>
Keywords
dielectric thin films; electric breakdown of solids; insulated gate field effect transistors; metal-insulator-semiconductor structures; silicon compounds; 0 to 4 MHz; 8.6 to 11 nm; Al-SiO/sub 2/-Si; DC conditions; HF TDDB; MISS; bipolar pulse conditions; field accelerations of breakdown time; frequencies; lifetime; pulse stressing; thin oxides; time-dependent dielectric breakdown; unipolar pulse conditions; Annealing; Capacitors; Computerized monitoring; Dielectric breakdown; Electric breakdown; Frequency; MOSFET circuits; Pulse generation; Scattering; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.82056
Filename
82056
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