Silicon optical modulators at 1.3- mu m based on free-carrier absorption

Author

Treyz, G.V. ; May, Paul G. ; Halbout, Jean-Marc

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

12

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

276

Lastpage

278

Abstract

Silicon optical waveguide modulators, appropriate for operation in the 1.3-1.55 mu m wavelength region, have been fabricated and their performance characterized at the wavelength of 1.3 mu m. The modulator structures consist of p-i-n diodes integrated with silicon waveguides; device operation is based on free-carrier absorption. Modulation depths of -6.2 dB and response times less than 50 ns have been measured. Experimental results are compared with the p-i-n diode theory. It is argued that the device is suitable for integration with silicon electronics and silicon optoelectronic devices. The response times measured for the current devices may be improved by reducing the transverse dimensions of the p-i-n structure.<>

Keywords

elemental semiconductors; integrated optoelectronics; optical modulation; optical waveguide components; p-i-n diodes; silicon; 1.3 micron; 50 ns; OEIC; Si optical modulators; device operation; free-carrier absorption; modulation depth; modulator structures; performance; response times; semiconductors; wavelength region; Absorption; Current measurement; Delay; Optical modulation; Optical waveguide theory; Optical waveguides; Optoelectronic devices; P-i-n diodes; Silicon; Wavelength measurement;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.82059

Filename

82059