Title :
Thermally stable, superlattice-enhanced 1.3- mu m InGaAs IMSM photodetectors on GaAs substrates
Author :
Choudhury, A.N.M.M. ; Jagannath, C. ; Negri, A. ; Elman, B. ; Armiento, C.A.
Author_Institution :
GTE Labs. Inc., Waltham, MA, USA
fDate :
6/1/1991 12:00:00 AM
Abstract :
Dark current, DC responsivity, and high-frequency response data of 1.3- mu m interdigitated metal-semiconductor-metal (IMSM) photodetectors on a thermally stable, superlattice-enhanced InGaAs/GaAs structure are reported. Auger analysis revealed that the superlattice cap layer is capable of inhibiting the out-diffusion of indium to the surface during high-temperature annealing cycle, thus minimizing the degradation of the optical and electrical characteristics of the photodetectors fabricated on this material. The internal quantum efficiency and high-frequency bandwidth of the detectors are over 91% and 14 GHz, respectively. The stability of this IMSM structure to high-temperature annealing offers the potential for fabrication of low-cost, long-wavelength monolithic receivers based oil GaAs MESFET technology.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; photodetectors; semiconductor epitaxial layers; semiconductor superlattices; 1.3 micron; 14 GHz; 90 percent; Auger analysis; GaAs MESFET technology; GaAs substrates; IMSM structure; In out-diffraction inhibition; InGaAs-GaAs; dark current; high-frequency bandwidth; high-frequency response data; high-temperature annealing cycle; interdigitated metal-semiconductor-metal; internal quantum efficiency; monolithic receivers; photodetectors; semiconductors; superlattice cap layer; superlattice-enhanced; thermally stable; Annealing; Dark current; Electric variables; Gallium arsenide; Indium gallium arsenide; Metallic superlattices; Optical receivers; Optical superlattices; Photodetectors; Thermal degradation;
Journal_Title :
Electron Device Letters, IEEE
