Current-handling and switching performance of MOS-controlled thyristor (MCT) structures

Author

Bauer, F. ; Hollenbeck, H. ; Stockmeier, T. ; Fichtner, Wolfgang

Author_Institution

ABB Corp. Res. Center, Baden, Switzerland

Volume

12

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

297

Lastpage

299

Abstract

Experimental results are reported for array-type MCT devices fabricated using a BiMOS process with additional power-specific fabrication steps. Stationary measurements of both the thyristor forward behavior and the intrinsic p-channel MOSFET switch characteristics are an indication of the device quality. Through dynamic testing procedures, the device was analyzed in its transient current handling. The combination of anode current and blocking voltage values is the highest ever reported on MCT devices (2 kV, 5 A, in 2 mu s).<>

Keywords

metal-insulator-semiconductor devices; thyristors; 2 kV; 2 mus; 5 A; BiMOS process; MCT; MOS-controlled thyristor; MOSFET switch characteristics; anode current; array-type MCT devices; blocking voltage; current handling performance; dynamic testing procedures; power-specific fabrication steps; static measurements; switching performance; thyristor forward behavior; transient current handling; Anodes; Cathodes; Helium; Insulated gate bipolar transistors; MOSFET circuits; Modems; Switches; Termination of employment; Thyristors; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.82066

Filename

82066