Title :
Electron trapping in irradiated SIMOX buried oxides
Author :
Ouisse, Thierry ; Cristoloveanu, Sorin ; Borel, Gerard
Author_Institution :
Thomson-TMS, Saint-Egreve, France
fDate :
6/1/1991 12:00:00 AM
Abstract :
Presented are new results of X-ray exposure of silicon-on-insulator devices fabricated on SIMOX (separation by implantation of oxygen) substrates. It is shown that the presence of numerous electron traps in the buried oxide may dominate the back-gate threshold voltage shift of strongly irradiated SIMOX transistors. A rebound effect occurs under a negative oxide field, due to the trapping of negative charges rather than to interface states generation. Irradiated transistors also show an increased sensitivity to hot-carrier effects.<>
Keywords :
X-ray effects; electron traps; hot carriers; insulated gate field effect transistors; radiation hardening (electronics); semiconductor technology; semiconductor-insulator boundaries; MOSFETs; SOI devices; X-ray exposure; back-gate threshold voltage shift; electron trapping; increased sensitivity to hot-carrier effects; irradiated SIMOX buried oxides; irradiated SIMOX transistors; negative oxide field; rebound effect; trapping of negative charges; Annealing; Argon; Degradation; Electron traps; Inspection; Interface states; MOSFETs; Silicon on insulator technology; Substrates; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
