A simple technique for measuring the generation lifetime in SOI-substrate material using the principle of charge centroids

Author

McDaid, L.J. ; Hall, S. ; Eccleston, W. ; Alderman, J.C.

Author_Institution

Dept. of Electr. Eng. & Electron., Liverpool Univ., UK

Volume

12

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

318

Lastpage

320

Abstract

A charge-time measurement, utilizing the charge-centroid principle, is presented for the rapid assessment of silicon-on-insulator (SOI) substrates. The technique is applicable to technologies which involve the formation of a buried dielectric layer with a thin-film body region wherein devices are formed. The measurement is routine and only requires a simple two-terminal SOI capacitor from which the quality of the body region, as indicated by the lifetime, can be assessed prior to device fabrication. This measurement can be carried out on any combination of dopant type. All parameters required by the analysis are obtainable from a simple two-terminal CV plot.<>

Keywords

carrier lifetime; materials testing; semiconductor technology; semiconductor-insulator boundaries; SIMOX; SOI; SOI-substrate material; SOS; any combination of dopant type; buried dielectric layer; charge centroids; charge-time measurement; generation lifetime measurement; materials testing; measurement technique; production testing; rapid assessment; routine measurement; thin-film body region; two-terminal CV plot; two-terminal SOI capacitor; Body regions; Capacitors; Current measurement; Dielectric devices; Dielectric measurements; Dielectric substrates; Dielectric thin films; Fabrication; Silicon on insulator technology; Thin film devices;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.82073

Filename

82073