Development of a New Methodology to Model the Synergistic Effects Between TID and ASETs

Author

Roche, Nicolas J H ; Dusseau, L. ; Boch, J. ; Velo, Y. Gonzalez ; Vaillé, J.R. ; Saigne, F. ; Auriel, G. ; Azais, B. ; Buchner, S.P. ; Marec, R. ; Calvel, P. ; Bezerra, F.

Author_Institution

IES, Univ. Montpellier II, Montpellier, France

Volume

57

Issue

4

fYear

2010

Firstpage

1861

Lastpage

1868

Abstract

A high level model is developed using circuit analysis to predict the synergy effect observed on a three stages operational amplifier. This model makes possible to explain and to predict the analog single event transients propagation in circuitry. The effect of total ionizing dose is taken into account by varying the model parameters using the monitoring of the usual supply current induced degradation of the operational amplifier.

Keywords

high level synthesis; network analysis; operational amplifiers; radiation effects; ASET; TID; analog single event transients propagation; circuit analysis; high level model; operational amplifier; synergistic effects; total ionizing dose; Analog integrated circuits; Analytical models; Bipolar integrated circuits; Circuit analysis; Circuit simulation; Degradation; Feedback; Gain; Integrated circuit modeling; Operational amplifiers; Predictive models; Shape; Transistors; Voltage measurement; Bipolar analog integrated circuits; integrated circuit modeling; ionizing dose; single event transient; transient propagation; transient response;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2010.2042616

Filename

5550420