DocumentCode
1297796
Title
Sensitive Volume and Triggering Criteria of SEB in Classic Planar VDMOS
Author
Luu, Aurore ; Austin, Patrick ; Miller, Florent ; Buard, Nadine ; Carrière, Thierry ; Poirot, Patrick ; Gaillard, Remi ; Bafleur, Marise ; Sarrabayrouse, Gerard
Author_Institution
Univ. catholique de Louvain, Louvain La Neuve, Belgium
Volume
57
Issue
4
fYear
2010
Firstpage
1900
Lastpage
1907
Abstract
This paper presents 2-D numerical simulation results which allow the definition of the sensitive volume and triggering criteria of SEBs for VDMOS in classic planar-type technology. The results analysis allows for a better understanding of the SEB mechanism.
Keywords
power MOSFET; 2D numerical simulation; SEB mechanism; classic planar VDMOS; classic planar-type technology; sensitive volume; single event burnout; triggering criteria; Atmospheric modeling; Epitaxial growth; Epitaxial layers; Failure analysis; Ions; MOSFET circuits; Numerical simulation; Paper technology; Power MOSFET; Protection; Semiconductor process modeling; Space charge; Space technology; Substrates; Testing; Power MOSFET; SEB; TCAD simulations; sensitive volume; triggering criteria;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2010.2044808
Filename
5550445
Link To Document