Differential gain and linewidth enhancement factor of 1.5- mu m multiple-quantum-well active layers with and without biaxially compressive strain

Author

Kikuchi, K. ; Kakui, M. ; Zah, C.E. ; Lee, T.P.

Author_Institution

Dept. of Electron. Eng., Tokyo Univ., Japan

Volume

3

Issue

4

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

314

Lastpage

317

Abstract

The differential gain and the linewidth enhancement factor of 1.5- mu m multiple-quantum-well (MQW) active layers were measured with and without biaxially compressive strain as functions of the wavelength and the carrier density. These parameters of the strained MQW layer reveal stronger carrier-density dependence than those of the unstrained MQW layer. Most significantly, an anomalous increase in the linewidth enhancement factor is observed at high carrier densities. These characteristics are explained by a simple theoretical analysis.<>

Keywords

carrier density; piezo-optical effects; semiconductor junction lasers; spectral line breadth; 1.5 micron; biaxially compressive strain; carrier density; differential gain; linewidth enhancement factor; multiple-quantum-well active layers; semiconductor lasers; strained MQW layer; unstrained MQW layer; wavelength dependence; Charge carrier density; Density measurement; Optical amplifiers; Optical pumping; Probes; Quantum well devices; Quantum well lasers; Semiconductor optical amplifiers; Stimulated emission; Strain measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.82097

Filename

82097