Mobility Modeling Considerations for Radiation Effects Simulations in Silicon

Author

Cummings, Daniel J. ; Witulski, Arthur F. ; Park, Hyunwoo ; Schrimpf, Ronald D. ; Thompson, Scott E. ; Law, Mark E.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA

Volume

57

Issue

4

fYear

2010

Firstpage

2318

Lastpage

2326

Abstract

The results of semiconductor device simulations are highly dependent on the electron and hole mobility models. The manner in which mobility is modeled at high-injection levels is especially important for single-event upset simulations due to the large number of electron-hole pairs generated along a particle strike path. This paper presents an approach to modeling mobility that describes majority and minority carrier mobility, carrier-carrier scattering, and temperature dependence in a computationally efficient form relevant for radiation effects simulations in silicon.

Keywords

hole mobility; radiation effects; semiconductor device models; simulation; Si; carrier-carrier scattering; electron-hole pairs; hole mobility models; minority carrier mobility; mobility modeling considerations; radiation effects simulations; semiconductor device simulations; Charge carrier processes; Computational modeling; Data models; Doping; Electron mobility; Particle scattering; Radiation effects; Scattering; Semiconductor devices; Semiconductor process modeling; Silicon; Single event upset; Temperature dependence; Carrier-carrier scattering; device simulation; mobility model; radiation effects; single-event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2010.2052831

Filename

5550486