Title :
Study of Random Dopant Fluctuation Effects in Germanium-Source Tunnel FETs
Author :
Damrongplasit, Nattapol ; Changhwan Shin ; Sung Hwan Kim ; Vega, R.A. ; Tsu-Jae King Liu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
Abstract :
The effects of random dopant fluctuations (RDFs) on the performance of Germanium-source tunnel field-effect transistors (TFETs) is studied using 3-D device simulation. The RDF in the source region is found to have the most impact on threshold voltage variation (σVTH) if the source is moderately doped (1019 cm-3) such that vertical tunneling within the source is dominant. If the source is heavily doped (1020 cm-3) such that lateral tunneling from the source to the channel is dominant, the impact of RDF in the channel region is also significant. RDF-induced threshold voltage variation (σVTH) for an optimally designed Ge-source TFET is relatively modest (σVTH <; 20 mV at Lg = 30 nm), compared with a MOSFET of similar gate length. Supply voltage scaling is not beneficial for reducing TFET σVTH.
Keywords :
field effect transistors; fluctuations; tunnel transistors; 3D device simulation; Ge; Ge-source TFET; field-effect transistors; germanium-source tunnel FET; lateral tunneling; random dopant fluctuation effects; supply voltage scaling; threshold voltage variation; vertical tunneling; Doping; Logic gates; Performance evaluation; Resource description framework; Semiconductor process modeling; Transistors; Tunneling; Random dopant fluctuations (RDFs); tunnel field-effect transistor (TFET); tunneling; variability;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2161990
