DocumentCode :
1299197
Title :
Preparation of Inclusion and Precipitate Free Semi-Insulating CdTe
Author :
Belas, Eduard ; Bugár, Marek ; Grill, Roman ; Franc, Jan ; Höschl, Pavel
Author_Institution :
Inst. of Phys., Charles Univ., Prague, Czech Republic
Volume :
56
Issue :
4
fYear :
2009
Firstpage :
1758
Lastpage :
1762
Abstract :
Annealing conditions used for the preparation of semi-insulating CdTe after elimination of inclusions and precipitates are discussed. Second phase defects are eliminated by post-growth stoichiometric annealing and the semi-insulating CdTe is prepared by re-annealing under Te or Cd overpressure. In case of In-doped samples with high In concentration, semi-insulating CdTe with resistivity approximately 109 Omegacm was prepared by annealing under Te overpressure. In-situ high temperature measurement of the electrical conductivity and Hall coefficient is used to find annealing conditions for undoped and slightly In-doped CdTe. The dominant extrinsic acceptor level with a concentration of NA = 4 times 1015 cm-3 was determined and Cd-rich annealing was used for the preparation of semi-insulating CdTe.
Keywords :
Hall effect; II-VI semiconductors; annealing; cadmium compounds; doping profiles; electrical conductivity; high-temperature effects; impurity states; inclusions; indium; materials preparation; precipitation; semiconductor doping; semiconductor growth; solid scintillation detectors; stoichiometry; CdTe detector; CdTe:In; Hall coefficient; doped sample; doping concentration; electrical conductivity; extrinsic acceptor level; high temperature measurement; inclusions; material preparation; postgrowth stoichiometric annealing; precipitation; second phase defect; Annealing; Conducting materials; Conductivity; Contracts; Crystalline materials; Crystals; Gamma ray detectors; Phase detection; Tellurium; Temperature measurement; Annealing; CdTe; diffusion; inclusions; precipitates;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2009.2019596
Filename :
5204599
Link To Document :
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